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STM8S005K6T6CTR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8S005K6T6CTR Datasheet PDF : 103 Pages
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STM8S005K6 STM8S005C6
Electrical characteristics
Symbol Parameter
ACCHSI Accuracy of HSI
oscillator
Conditions
Min
User-trimmed with
CLK_HSITRIMR register
fcoorngdiivtieonnsV(1D)D and TA
Typ Max Unit
1.0(2) %
Accuracy of HSI
oscillator (factory
calibrated)
VDD = 5 V, TA = 25°C(3)
VDD = 5 V,
-40 °C ≤ TA ≤ 85 °C
tsu(HSI) HSI oscillator
wakeup time
including calibration
5.0
-5.0
5.0
1.0(2) µs
IDD(HSI) HSI oscillator power
consumption
170 250(3) µA
(1) Refer to application note.
(2) Guaranteed by design, not tested in production.
(3) Data based on characterization results, not tested in production.
Figure 19: Typical HSI frequency variation vs VDD @ 3 temperatures
-40°C
16.5
25°C
16.4
85°C
16.3
16.2
16.1
16
15.9
15.8
15.7
15.6
15.5
2.5
3
3.5
4
4.5
5
5.5
6
VDD [V]
IID10241
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDD and TA.
DocID022186 Rev 3
69/103

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