STPS61170CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS61170CW Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS61170C
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
170
80
Per diode
30
TC = 150 °C δ = 0.5
Per device
60
IFSM Surge non repetitive forward current
PARM
VARM(1)
VASM(1)
Repetitive peak avalanche power
Maximum repetitive peak avalanche voltage
Maximum single pulse peak avalanche voltage
Tstg Storage temperature range
Tj Maximum operating junction temperature(2)
dV/dt Critical rate of rise reverse voltage
tp = 10 ms sinusoidal
tp = 1 µs Tj = 25 °C
500
31800
tp = 1 µs, Tj < 150 °C,
IAR < 47 A
200
-65 to + 175
175
10000
1. Refer to Figure 11
2.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance parameters
Symbol
Parameter
Value
V
A
A
A
W
V
°C
°C
V/µs
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
Per diode
Total
0.9
0.6
°C/W
0.3
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
VF (2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 30 A
IF = 60 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.54 x IF(AV) + 0.0043 IF2(RMS)
60
µA
16
60
mA
0.84
0.63 0.67
V
0.92
0.76 0.80
2/7
Doc ID 11643 Rev 2
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