STPS61170CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS61170CW Datasheet PDF : 7 Pages
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STPS61170C
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
30
25
20
15
10
5
0
0
5
d=0.05
d=0.1
d=0.2
d=0.5
d=1
T
IF(AV)(A)
d=tp/T
tp
10
15
20
25
30
35
40
IF(AV)(A)
35
30
25
20
15
10
T
5
d=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
1 PARMPP(A1ARµRMsM()1(tµps))
1
0.1 0.1
PARM(Tj)
1.2 PARMP(AP2R5AMR°CM(2)(5tp°C) )
1.2
11
0.8 0.8
0.01
0.01
0.001
0.001 0.01
0.01
0.1
0.1
tp(µs)
1
10
1
10
0.6 0.6
0.4 0.4
100
100
10t0p0(µs)
1000
0.2
0.2
0
0 25
25
50
50
Tj(°C)
75
100
75
100
125
125
T15j(0°C)
150
Figure 5.
IM(A)
400
350
300
250
200
150
100
IM
50
0
1.E-03
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
t
d =0.5
1.E-02
1.E-01
t(s)
TC=50°C
TC=75°C
TC=125°C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
d=0.5
0.6
0.5
0.4 d=0.2
0.3 d=0.1
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
T
tP(s)
d=tp/T
1.E-01
tp
1.E+00
Doc ID 11643 Rev 2
3/7
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