STPS61170CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS61170CW Datasheet PDF : 7 Pages
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Characteristics
STPS61170C
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
IR(µA)
1.E+05
1.E+04
1.E+03
Tj=150°C
Tj=125°C
Tj=100°C
1.E+02
1.E+01
Tj=75°C
Tj=50°C
1.E+00
Tj=25°C
1.E-01
VR(V)
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1000
100
1
VR(V)
10
100
1000
Figure 9.
Forward voltage drop versus
forward current
(per diode, low level)
IFM(A)
30
25
Tj=125°C
(Maximum values)
20
Tj=125°C
(Typical values)
15
Tj=25°C
(Maximum values)
10
5
VFM(V)
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 10. Forward voltage drop versus
forward current
(per diode, high level)
IFM(A)
1000
100
10
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Figure 11.
Reverse safe operating area(tp < 1µs and Tj < 150 °C)
Iarm (A)
60
58
56
54
52
50
48
46
44
42
40
Varm (V)
170 175 180 185 190 195 200 205 210 215 220
4/7
Doc ID 11643 Rev 2
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