STP7NB60FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP7NB60FP

N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET

STMicroelectronics 

STP7NB60

STP7NB60FP

N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP

PowerMESH™ MOSFET

Table 1. General Features

Type

VDSS

RDS(on)

STP7NB60

600 V

< 1.2 Ω

STP7NB60FP 600 V

< 1.2 Ω

ID

7.2 A

4.1 A

Figure 1. Package

FEATURES SUMMARY

■ TYPICAL RDS(on) = 1.0 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstand-

ing performances. The new patent pending strip

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, exceptional avalanche and dv/

dt capabilities and unrivalled gate charge and

switching characteristics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-220

3

2

1

TO-220FP

Figure 2. Internal Schematic Diagram

Table 2. Order Codes

Part Number

STP7NB60

STP7NB60FP

Marking

P7NB60

P7NB60FP

April 2004

Package

TO-220

TO-220FP

Packaging

TUBE

TUBE

REV. 2

1/11

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