STP7NB60FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP7NB60FP Datasheet PDF : 11 Pages
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STP7NB60/FP
Table 11. Source Drain Diode
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (1) Source-drain Current
(pulsed)
VSD (2) Forward On Voltage
ISD = 7.2 A VGS = 0
trr
Reverse Recovery Time ISD = 7.2; A di/dt = 100 A/µs
Qrr Reverse RecoveryCharge VDD = 100 V Tj = 150 °C
(see test circuit, Figure 20)
IRRAM Reverse RecoveryCharge
Note: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
7.2
A
28.8
A
V
530
ns
4.5
µC
17
A
Figure 3. Safe Operating Area for TO-220
Figure 4. Safe Operating Area for TO-220FP
Figure 5. Thermal Impedance for TO-220
Figure 6. Thermal Impedance for TO-220FP
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