STP7NB60FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP7NB60FP Datasheet PDF : 11 Pages
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STP7NB60/FP
Table 3. Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain- gate Voltage (RGS = 20 kΩ)
VGS
Gate-source Voltage
ID
Drain Current (cont.) at TC = 25 °C
ID
Drain Current (cont.) at TC = 100 °C
IDM (1)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25 °C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
Note: 1. Pulse width limited by safe operating area
2. ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Table 4. Thermal Data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 5. Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C; ID = IAR; VDD = 50 V)
Value
STP7NB60
STP7NB60FP
600
600
± 30
7.2
4.1
4.5
2.6
28.8
28.8
125
40
1.0
0.32
4.5
4.5
–
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W°/C
V/ns
V
°C
°C
TO-220
1.0
Value
TO220-FP
3.13
62.5
300
Unit
°C/W
°C/W
°C
Max Value
Unit
7.2
A
580
mJ
2/11
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