STP7NB60FP View Datasheet(PDF) - STMicroelectronics
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Description
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STP7NB60FP Datasheet PDF : 11 Pages
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STP7NB60/FP
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 6. Off
Symbol
Parameter
V(BR)DSS Drain-source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS
Gate-body Leakage
Current (VDS = 0)
Test Conditions
ID = 250 mA; VGS = 0
VDS = Max Rating
VDS = Max Rating; Tc = 125 °C
VGS = ± 30 V
Min. Typ. Max. Unit
600
V
1
µA
50
µA
± 100 nA
Table 7. On (1)
Symbol
Parameter
Test Conditions
VGS(th) Gate Threshold Voltage
VDS = VGS; ID = 250 µA
RDS(on) Static Drain-source On
Resistance
VGS = 10V; ID = 3.6 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
3
4
5
V
1.0 1.2
Ω
Table 8. Dynamic
Symbol
Parameter
Test Conditions
gfs (1) Forward
Transconductance
VDS > ID(on) x RDS(on)max; ID = 3.6 A
Ciss Input Capacitance
VDS = 25 V; f = 1 MHz; VGS = 0
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
4
5.3
S
1250 1625 pF
165 223
pF
16
22
pF
Table 9. Switching On
Symbol
Parameter
td(on) Turn-on Time
tr
Rise Time
Test Conditions
VDD = 300 V; ID = 3.6 A RG = 4.7 Ω
VGS = 10 V (see test circuit, Figure 18)
Min. Typ. Max. Unit
18
27
ns
8
12
ns
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 480 V ID = 7.2 A VGS = 10 V
30
45
nC
9.9
nC
13.3
nC
Table 10. Switching Off
Symbol
Parameter
tr(Voff) Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 480 V; ID = 7.2 A; RG = 4.7 Ω
VGS = 10 V (see test circuit, Figure 20)
Min. Typ. Max. Unit
8
12
ns
5
8
ns
15
23
ns
3/11
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