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STM32WB55CEV7 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32WB55CEV7 Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
Electrical characteristics
Symbol
Table 82. ADC accuracy - Limited test conditions 4(1)(2)(3) (continued)
Parameter
Conditions(4)
Min Typ Max Unit
THD
Total
harmonic
distortion
Single
ended
Fast channel (max speed)
Slow channel (max speed)
Differential
Fast channel (max speed)
Slow channel (max speed)
- -71 -69
- -71 -69
dB
- -73 -72
- -73 -72
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins that may potentially inject negative current.
4.
The I/O
VDDA <
analog
2.4 V).
switch voltage booster is
It is disabled when VDDA
≥en2a.4blVe.dNwohoevneVrsDaDmAp<lin2g.4.
V
(BOOSTEN
=
1
in
the
SYSCFG_CFGR1
when
Figure 29. ADC accuracy characteristics
4095
4094
4093
7
6
5
4
3
2
1
(2)
ET
EL
EO
ED
1 LSB ideal
12 345 67
EG
(3)
(1)
4093 4094 4095 4096
(1) Example of an actual transfer curve
(2) Ideal transfer curve
(3) End point correlation line
ET = Total unadjusted error: maximum deviation
between actual and ideal transfer curves
EO = Offset error: maximum deviation between the
first actual transition and the first ideal one
EG = Gain error: deviation between the last ideal
transition and the last actual one
ED = Differential linearity error: maximum
deviation between actual steps and the ideal ones
EL = Integral linearity error: maximum deviation
between any actual transition and the end point
correlation line
VREF+/4096
MS54001V1
DS11929 Rev 10
151/193
169

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