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STM32WB55CEV7 View Datasheet(PDF) - STMicroelectronics

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Description
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STM32WB55CEV7 Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
Electrical characteristics
6.3.23 Temperature sensor characteristics
Table 85. TS characteristics
Symbol
TL(1)
Avg_Slope(2)
V30
tSTART
(TS_BUF)(1)
tSTART(1)
Parameter
VTS linearity with temperature
Average slope
Voltage at 30 °C (±5 °C)(3)
Sensor buffer start-up time in continuous mode(4)
Start-up time when entering in continuous mode(4)
Min
-
2.3
0.742
-
-
Typ
±1
2.5
0.76
8
70
Max
±2
2.7
0.785
15
120
Unit
°C
mV / °C
V
µs
µs
tS_temp(1) ADC sampling time when reading the temperature
5
-
-
µs
IDD(TS)(1)
Temperature sensor consumption from VDD, when
selected by ADC
-
4.7
7
µA
1. Guaranteed by design.
2. Guaranteed by characterization results.
3.
Measured at
Temperature
VseDnDsAo=r
3.0 V ±10
calibration
mV. The
values.
V30
ADC
conversion
result
is
stored
in
the
TS_CAL1
byte.
Refer
to
Table
11:
4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
6.3.24
VBAT monitoring characteristics
Symbol
Table 86. VBAT monitoring characteristics(1)
Parameter
Min Typ
R
Resistor bridge for VBAT
Q
Er(2)
Ratio on VBAT measurement
Error on Q
tS_vbat(2) ADC sampling time when reading VBAT
1. 1.55 < VBAT < 3.6 V.
2. Guaranteed by design.
- 3 x 39
-
3
-10
-
12
-
Max
-
-
10
-
Unit
kΩ
-
%
µs
Table 87. VBAT charging characteristics
Symbol
Parameter Conditions
Min
Typ
Max
Unit
Battery
VBRS = 0
-
5
-
RBC
charging
resistor
VBRS = 1
-
1.5
-
kΩ
DS11929 Rev 10
155/193
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