BF1206F View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
0
gain
reduction
(dB)
10
20
001aad919
110
Vunw
(dBµV)
100
001aad920
30
90
40
50
0
1
2
3
VAGC (V)
80
0
20
40
60
gain reduction (dB)
VDS(A) = 2.8 V; VG2(nom) = 2.5 V; ID(nom) = 4 mA;
Tamb = 25 °C.
Fig 25. Amplifier B: typical gain reduction as a function
of the AGC voltage; typical values
VDS(B) = 2.8 V; VG2 = 2.5 V; ID(nom) = 4 mA;
fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
Fig 26. Amplifier B: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
5
ID
(mA)
4
001aad921
3
2
1
0
0
20
40
60
gain reduction (dB)
VDS(B) = VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(B) = 220 kW; f = 50 MHz; Tamb = 25 °C.
Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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