M58WR064F-ZBE View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58WR064F-ZBE

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR064FT, M58WR064FB

Table 32. CFI Query System Interface Information

Offset

Data

Description

VDD Logic Supply Minimum Program/Erase or Write voltage

1Bh

0017h

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 millivolts

VDD Logic Supply Maximum Program/Erase or Write voltage

1Ch

0020h

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 millivolts

VPP [Programming] Supply Minimum Program/Erase voltage

1Dh

00B4h

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 millivolts

VPP [Programming] Supply Maximum Program/Erase voltage

1Eh

00C6h

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 millivolts

1Fh

0004h Typical time-out per single byte/word program = 2n µs

20h

0000h Typical time-out for multi-Byte programming = 2n µs

21h

000Ah Typical time-out per individual block erase = 2n ms

22h

0000h Typical time-out for full chip erase = 2n ms

23h

0003h Maximum time-out for word program = 2n times typical

24h

0000h Maximum time-out for multi-Byte programming = 2n times typical

25h

0002h Maximum time-out per individual block erase = 2n times typical

26h

0000h Maximum time-out for chip erase = 2n times typical

Value

1.7V

2V

11.4V

12.6V

16µs

NA

1s

NA

128µs

NA

4s

NA

63/87

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