DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M58WR064F-ZBE View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M58WR064F-ZBE Datasheet PDF : 87 Pages
First Prev 61 62 63 64 65 66 67 68 69 70 Next Last
M58WR064FT, M58WR064FB
M58WR064FT (top)
Offset
Data
M58WR064FB (bottom)
Offset
Data
Description
Bank Regions 1 (Erase Block Type 2): BIts per cell, internal
ECC
(P+2E)h = 67h 01h Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
Bank Region 1 (Erase Block Type 2): Page mode and
synchronous mode capabilities
(P+2F)h = 68h
03h
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, see Table 28. and Table 29.
Table 39. Bank and Erase Block Region 2 Information
M58WR064FT (top) M58WR064FB (bottom)
Offset
Data
Offset
Data
Description
(P+28)h = 61h 01h (P+30)h = 69h 0Fh
Number of identical banks within bank region 2
(P+29)h = 62h 00h (P+31)h = 6Ah 00h
Number of program or erase operations allowed in bank region
(P+2A)h = 63h 11h (P+32)h = 6Bh
11h
2:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
Number of program or erase operations allowed in other banks
(P+2B)h = 64h
00h (P+33)h = 6Ch
00h
while a bank in this region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
Number of program or erase operations allowed in other banks
(P+2C)h = 65h
00h (P+34)h = 6Dh
00h
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
Types of erase block regions in region 2
n = number of erase block regions with contiguous same-size
(P+2D)h = 66h 02h (P+35)h = 6Eh 01h erase blocks.
Symmetrically blocked banks have one blocking region.(2)
(P+2E)h = 67h 06h (P+36)h = 6Fh 07h
(P+2F)h = 68h 00h (P+37)h = 70h 00h Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
(P+30)h = 69h 00h (P+38)h = 71h 00h Bits 16-31: n×256 = number of bytes in erase block region
(P+31)h = 6Ah 01h (P+39)h = 72h 01h
(P+32)h = 6Bh 64h (P+3A)h = 73h 64h Bank Region 2 (Erase Block Type 1)
(P+33)h = 6Ch 00h (P+3B)h = 74h 00h Minimum block erase cycles × 1000
Bank Region 2 (Erase Block Type 1): BIts per cell, internal
ECC
(P+34)h = 6Dh 01h (P+3C)h = 75h 01h Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
68/87

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]