M58WR064F-ZBE View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M58WR064F-ZBE

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR064FT, M58WR064FB

M58WR064FT (top)

Offset

Data

M58WR064FB (bottom)

Offset

Data

Description

Bank Region 2 (Erase Block Type 1): Page mode and

synchronous mode capabilities (defined in Table 36.)

(P+35)h = 6Eh

03h (P+3D)h = 76h

03h

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

(P+36)h = 6Fh 07h

(P+37)h = 70h 00h

(P+38)h = 71h 20h

(P+39)h = 72h 00h

Bank Region 2 Erase Block Type 2 Information

Bits 0-15: n+1 = number of identical-sized erase blocks

Bits 16-31: n×256 = number of bytes in erase block region

(P+3A)h = 73h 64h

(P+3B)h = 74h 00h

Bank Region 2 (Erase Block Type 2)

Minimum block erase cycles × 1000

(P+3C)h = 75h 01h

Bank Region 2 (Erase Block Type 2): BIts per cell, internal

ECC

Bits 0-3: bits per cell in erase region

Bit 4: reserved for “internal ECC used”

BIts 5-7: reserved

(P+3D)h = 76h 03h

Bank Region 2 (Erase Block Type 2): Page mode and

synchronous

mode capabilities (defined in Table 36.)

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

(P+3E)h = 77h

(P+3E)h = 77h

Feature Space definitions

(P+3F)h = 78h

(P+3F)h = 78h

Reserved

Note: 1. The variable P is a pointer which is defined at CFI offset 15h.

2. Bank Regions. There are two Bank Regions, see Table 28. and Table 29.

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