M24512-WCS6TP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M24512-WCS6TP

512-Kbit serial I²C bus EEPROM

STMicroelectronics 

M24512-W M24512-R M24512-DR M24512-DF

DC and AC parameters

Figure 11. AC measurement I/O waveform

)NPUTVOLTAGELEVELS

6##

6##

)NPUTANDOUTPUT

4IMINGREFERENCELEVELS

6##

6##

-36

Table 10. Input parameters

Symbol

Parameter(1)

Test condition

CIN

Input capacitance (SDA)

CIN

Input capacitance (other pins)

ZL

Input impedance (E2, E1, E0, WC)(2)

ZH

VIN < 0.3 VCC

VIN > 0.7 VCC

1. Characterized only, not tested in production.

2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).

Min. Max. Unit

-

8 pF

-

6 pF

30

-

kΩ

500 -

kΩ

Table 11. Cycling performance by groups of four bytes

Symbol Parameter

Test condition(1)

Max.

Unit

Ncycle

Write cycle

endurance(2)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 Write cycle(3)

TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000

1. Cycling performance for products identified by process letter KB.

2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,

4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and

qualification.

3. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock

Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write

Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling.

Table 12. Memory cell data retention

Parameter

Data retention(1)

Test condition

TA = 55 °C

Min.

Unit

200

Year

1. For products identified by process letter KB. The data retention behavior is checked in production. The

200-year limit is defined from characterization and qualification results.

Doc ID 16459 Rev 26

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