M24512-WCS6TP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M24512-WCS6TP

512-Kbit serial I²C bus EEPROM

STMicroelectronics 

M24512-W M24512-R M24512-DR M24512-DF

DC and AC parameters

Table 14. DC characteristics (M24512-R, M24512-DR, device grade 6)

Symbol

Parameter

Test conditions(1) (in addition

to those in Table 7)

Min.

Max. Unit

ILI

Input leakage current

(, E1, E2, SCL, SDA)

VIN = VSS or VCC

device in Standby mode

ILO

Output leakage current

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-

±2

µA

-

±2

µA

ICC Supply current (Read)

VCC = 1.8 V, fc= 400 kHz

fc= 1 MHz(3)

-

0.8(2) mA

-

2.5 mA

ICC0 Supply current (Write)

ICC1 Standby supply current

VIL

Input low voltage

(SCL, SDA, WC)

During tW

Device not selected(5),

VIN = VSS or VCC, VCC = 1.8 V

1.8 V ≤ VCC < 2.5 V

-

5(4)

mA

-

1

µA

–0.45 0.25 VCC V

Input high voltage

(SCL, SDA)

VIH

Input high voltage

(WC, E2, E1, E0)

1.8 V ≤ VCC < 2.5 V

1.8 V ≤ VCC < 2.5 V

0.75 VCC 6.5

V

0.75 VCC VCC+0.6 V

VOL Output low voltage

IOL = 1 mA, VCC = 1.8 V

-

0.2

V

1. If the application uses the voltage range R device with 2.5 V < Vcc < 5.5 V and -40 °C < TA < +85 °C,

please refer to Table 13 instead of this table.

2. For devices identified by process letters K: ICC(max) = 1.5 mA.

3. Only for devices identified with process letter K.

4. Characterized value, not tested in production.

5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

Doc ID 16459 Rev 26

27/40

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