M48T212VMH View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M48T212VMH Datasheet PDF : 35 Pages
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DC and AC parameters
M48T212V
Table 13. Capacitance
Symbol
Parameter(1)(2)
Min
Max
CIN
Input capacitance
10
COUT(3) Input/output capacitance
10
1. Effective capacitance measured with power supply at 3.3V (M48T212V); sampled only, not 100% tested.
2. At 25°C, f = 1MHz.
3. Outputs deselected.
Unit
pF
pF
Table 14. DC characteristics
Sym
Parameter
Test condition(1)
M48T212V
–85
Unit
Min Typ Max
ILI(2)
ILO(3)
ICC
ICC1
ICC2
IBAT
Input leakage current
Output leakage current
Supply current
Supply current (standby) TTL
Supply current (standby) CMOS
Battery current OSC ON
Battery current OSC ON(4)
Battery current OSC OFF
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
Outputs open
E = VIH
E = VCC –0.2
VCC = 0V
±1 µA
±1 µA
4
10 mA
3 mA
2 mA
575
800 nA
950 1250 nA
100 nA
VIL Input low voltage
VIH Input high voltage
–0.3
0.8 V
2.0
VCC +
0.3
V
VOL
VOH
VOHB(6)
IOU1(7)
IOUT2
VPFD
Output low voltage
Output low voltage (open drain)(5)
Output high voltage
VOH battery back-up
VOUT current (active)
VOUT current (battery back-up)
Power-fail deselect voltage
VSO Battery back-up switchover voltage
IOL = 2.1mA
IOL = 10mA
IOH = –1.0mA
IOUT2 = –1.0µA
VOUT1 > VCC –0.3
VOUT2 > VBAT –0.3
0.4 V
0.4 V
2.4
V
2.0
3.6 V
70 mA
100 µA
2.7
2.9
3.0 V
VPFD –
100mV
V
VBAT Battery voltage
3.0
V
1. Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 3.0 to 3.6V (except where noted).
2. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ
resistor.
3. Outputs deselected.
4. IBAT (OSC ON) = Industrial Temperature Range - Grade 6 device.
5. For IRQ/FT & RST pins (open drain).
6. Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher
leakage currents will reduce battery life.
7. External SRAM must match TIMEKEEPER® supervisor chip VCC specification.
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