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STM32WB35RGQ7TR View Datasheet(PDF) - STMicroelectronics

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STM32WB35RGQ7TR Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
Electrical characteristics
6.3.9
Wakeup time from Low-power modes and voltage scaling
transition times
The wakeup times given in Table 51 are the latency between the event and the execution of
the first user instruction.
The device goes in Low-power mode after the WFE (Wait For Event) instruction.
Table 51. Low-power mode wakeup timings(1)
Symbol
Parameter
Conditions
Wakeup time from
tWUSLEEP Sleep mode
-
to Run mode
Wakeup time from 
Wakeup in Flash with memory in power-down
tWULPSLEEP Low-power sleep mode during low-power sleep mode (FPDS = 1 in
to Low-power run mode PWR_CR1) and with clock MSI = 2 MHz
tWUSTOP0
Wake up time from
Stop 0 mode 
to Run mode in Flash
memory
Range 1
Range 2
Wake up time from
Range 1
Stop 0 mode 
to Run mode in SRAM1 Range 2
Wake up time from
Range 1
Stop 1 mode 
to Run in Flash memory
SMPS bypassed
Range 2
tWUSTOP1
Wake up time from
Stop 1 mode 
to Run in SRAM1
SMPS bypassed
Range 1
Range 2
Wake up time from
Stop 1 mode to 
Low-power run mode
in Flash memory
Wake up time from
Stop 1 mode to 
Low-power run mode
in SRAM1
Regulator in
Low-power
mode (LPR = 1
in PWR_CR1)
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 32 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock HSI16 = 16 MHz
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 4 MHz
Typ Max Unit
9 10
No. of
CPU
cycles
9 10
2.38 2.96
1.69 2.00
1.70 2.01
7.43 8.59
2.63 3.00
1.80 2.00
1.82 2.02
7.58 8.70
4.67 5.56
5.09 6.03
5.08 6.00
µs
8.36 9.28
4.88 5.55
5.29 5.95
5.28 5.96
8.49 9.30
7.96 9.59
8.00 9.47
DS11929 Rev 10
117/193
169

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