STM32WB35RGQ7TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STM32WB35RGQ7TR
STMicroelectronics
STM32WB35RGQ7TR Datasheet PDF : 193 Pages
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Electrical characteristics
STM32WB55xx STM32WB35xx
Table 56. HSE oscillator characteristics
Symbol
Parameter
Conditions
Min
tSUA(HSE)
Startup time
for 80% amplitude stabilization VDDRF stabilized, XOTUNE=000000,
-
tSUR(HSE)
Startup time
for XOREADY signal
-40 to +125 °C range
-
IDDRF(HSE) HSE current consumption
HSEGMC=000, XOTUNE=000000
-
XOTg(HSE) XOTUNE granularity
-
XOTfp(HSE) XOTUNE frequency pulling
Capacitor bank
±20
XOTnb(HSE) XOTUNE number of tuning bits
-
XOTst(HSE) XOTUNE setting time
-
Typ
1000
250
50
1
±40
0
-
Max Unit
-
µs
-
- µA
5
ppm
-
-
bit
0.1 ms
Note:
For information about oscillator trimming refer to AN5165 “Development of RF hardware
using STM32WB microcontrollers”, available from www.st.com.
Low-speed external user clock generated from an external source
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. The information provided in this section is based on design simulation results
obtained with typical external components specified in Table 57. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins to minimize output distortion and startup stabilization time.
Refer to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
Table 57. Low-speed external user clock characteristics(1)
Symbol
Parameter
Conditions
Min Typ
IDD(LSE) LSE current consumption
LSEDRV[1:0] = 00
Low drive capability
-
250
LSEDRV[1:0] = 01
Medium low drive capability
-
315
LSEDRV[1:0] = 10
Medium high drive capability
-
500
LSEDRV[1:0] = 11
High drive capability
-
630
LSEDRV[1:0] = 00
Low drive capability
-
-
LSEDRV[1:0] = 01
Medium low drive capability
-
-
Gmcritmax Maximum critical crystal gm
LSEDRV[1:0] = 10
Medium high drive capability
-
-
tSU(LSE)(2) Startup time
LSEDRV[1:0] = 11
High drive capability
VDD stabilized
-
-
-
2
Max Unit
-
-
nA
-
-
0.50
0.75
µA/V
1.70
2.70
-
s
120/193
DS11929 Rev 10
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