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STM32WB35RGQ7TR View Datasheet(PDF) - STMicroelectronics

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STM32WB35RGQ7TR Datasheet PDF : 193 Pages
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Electrical characteristics
STM32WB55xx STM32WB35xx
Table 51. Low-power mode wakeup timings(1) (continued)
Symbol
Parameter
Conditions
Typ Max Unit
tWUSTOP2
Wake up time from
Stop 2 mode 
to Run mode in Flash
memory
SMPS bypassed
Wake up time from
Stop 2 mode to Run
mode in SRAM1
SMPS bypassed
Range 1
Range 2
Range 1
Range 2
tWUSTBY
Wakeup time from
Standby mode
to Run mode
SMPS Bypassed
Range 1
Wakeup clock MSI = 32 MHz
5.27 6.07
Wakeup clock HSI16 = 16 MHz 5.71 6.52
Wakeup clock HSI16 = 16 MHz 5.72 6.52
Wakeup clock MSI = 4 MHz
Wakeup clock MSI = 32 MHz
9.10 9.93
µs
5.20 5.94
Wakeup clock HSI16 = 16 MHz 5.64 6.42
Wakeup clock HSI16 = 16 MHz 5.64 6.43
Wakeup clock MSI = 4 MHz
9.05 9.85
Wakeup clock HSI16 = 16 MHz 51.0 58.1 µs
1. Guaranteed by characterization results (VDD = 3 V, .T = 25 °C).
Table 52. Regulator modes transition times(1)
Symbol
Parameter
Conditions
tWULPRUN
Wakeup time from Low-power run mode to
Run mode(2)
Code run with MSI 2 MHz
tVOST
Regulator transition time from Range 2 to
Range 1 or Range 1 to Range 2(3)
Code run with HSI16
1. Guaranteed by characterization results (VDD = 3 V, T = 25 °C).
2. Time until REGLPF flag is cleared in PWR_SR2.
3. Time until VOSF flag is cleared in PWR_SR2.
Typ Max Unit
15.33 16.30
µs
21.4 28.9
Symbol
Table 53. Wakeup time using LPUART(1)
Parameter
Conditions
Wakeup time needed to calculate the maximum
Stop mode 0
tWULPUART LPUART baud rate allowing to wakeup up from Stop
mode when LPUART clock source is HSI16
Stop mode 1/2
1. Guaranteed by design.
Typ Max Unit
-
1.7
µs
-
8.5
118/193
DS11929 Rev 10

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