DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32WB55VCV7 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32WB55VCV7 Datasheet PDF : 193 Pages
First Prev 91 92 93 94 95 96 97 98 99 100 Next Last
Electrical characteristics
STM32WB55xx STM32WB35xx
Table 28. RF receiver BLE characteristics (1 Mbps) (continued)
Symbol
Parameter
Test conditions
Typ Unit
30 to 2000 MHz
Bluetooth® Low Energy: -30 dBm
-3
P_OBB Out of band blocking
2003 to 2399 MHz
Bluetooth® Low Energy: -35 dBm
2484 to 2997 MHz
Bluetooth® Low Energy: -35 dBm
-5
dBm
-2
3 to 12.75 GHz
Bluetooth® Low Energy: -30 dBm
7
1. With ideal TX.
Table 29. RF receiver BLE characteristics (2 Mbps)
Symbol
Parameter
Test conditions
Prx_max
Psens(1)
Maximum input signal
PER <30.8%
Bluetooth® Low Energy: min -10 dBm
High sensitivity mode (SMPS Bypass) PER <30.8%
High sensitivity mode (SMPS ON)
Bluetooth® Low Energy: max -70 dBm
Rssimaxrange RSSI maximum value
Rssiminrange RSSI minimum value
Rssiaccu RSSI accuracy
C/Ico
Co-channel rejection
C/I
Adjacent channel interference
C/Image Image rejection (Fimage = -4 MHz)
-
-
-
Bluetooth® Low Energy spec: 21 dB
Adj ≥ 8MHz
Bluetooth® Low Energy: -27 dB
Adj ≤ -8 MHz
Bluetooth® Low Energy: -27 dB
Adj = 6 MHz
Bluetooth® Low Energy: -27 dB
Adj = -6 MHz
Bluetooth® Low Energy: -15 dB
Adj = 4 MHz
Bluetooth® Low Energy: -17 dB
Adj = 2 MHz
Bluetooth® Low Energy:15 dB
Adj = -2 MHz
Bluetooth® Low Energy:15 dB
Bluetooth® Low Energy: -9 dB
Typ
0
-93
-92.5
-7
-94
2
9
-53
Unit
dBm
-50
-49
dB
-46
-42
-3
-3
-26
92/193
DS11929 Rev 10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]