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STM32WB55VCV7 View Datasheet(PDF) - STMicroelectronics

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Description
Manufacturer
STM32WB55VCV7 Datasheet PDF : 193 Pages
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STM32WB55xx STM32WB35xx
Electrical characteristics
Table 29. RF receiver BLE characteristics (2 Mbps) (continued)
Symbol
Parameter
Test conditions
Typ Unit
|f2-f1| = 6 MHz
Bluetooth® Low Energy: -50 dBm
-29
P_IMD Intermodulation
|f2-f1| = 8 MHz
Bluetooth® Low Energy: -50 dBm
-30
|f2-f1| = 10 MHz
Bluetooth® Low Energy: -50 dBm
-29
30 to 2000 MHz
Bluetooth® Low Energy: -30 dBm
-3
dBm
P_OBB Out of band blocking
2003 to 2399 MHz
Bluetooth® Low Energy: -35 dBm
-9
2484 to 2997 MHz
Bluetooth® Low Energy: -35 dBm
-3
3 to 12.75 GHz
Bluetooth® Low Energy: -30 dBm
4
1. With ideal TX.
Symbol
Table 30. RF BLE power consumption for VDD = 3.3 V(1)
Parameter
Itxmax
TX maximum output power consumption (SMPS Bypass)
TX maximum output power consumption (SMPS On, VFBSMPS = 1.7 V)
Itx0dbm
TX 0 dBm output power consumption (SMPS Bypass)
TX 0 dBm output power consumption (SMPS On, VFBSMPS = 1.4 V)
Rx consumption (SMPS Bypass)
Irxlo
Rx consumption (SMPS On, VFBSMPS = 1.4 V)
1. Power consumption including RF subsystem and digital processing.
Typ Unit
12.7
7.8
8.8
mA
5.2
7.9
4.5
6.3.4
RF 802.15.4 characteristics
Table 31. RF transmitter 802.15.4 characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
Fop Frequency operating range
Fxtal Crystal frequency
∆F Delta frequency
Roqpsk On air data rate
PLLres RF channel spacing
-
2405 - 2480
-
- 32 - MHz
-
-
5
-
-
- 250 - kbps
-
- 5 - MHz
DS11929 Rev 10
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