STM32WB55VCV7 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STM32WB55VCV7
STMicroelectronics
STM32WB55VCV7 Datasheet PDF : 193 Pages
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Electrical characteristics
STM32WB55xx STM32WB35xx
6.3.5
Operating conditions at power-up / power-down
The parameters given in Table 34 are derived from tests performed under the ambient
temperature condition summarized in Table 24.
Table 34. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
tVDD
VDD rise time rate
VDD fall time rate
-
∞
-
10
∞
tVDDA
VDDA rise time rate
VDDA fall time rate
0
∞
-
10
∞
tVDDUSB
VDDUSB rise time rate
VDDUSB fall time rate
-
0
∞
10
∞
tVDDRF
VDDRF rise time rate
VDDRF fall time rate
-
∞
-
-
∞
Unit
µs/V
6.3.6
Embedded reset and power control block characteristics
The parameters given in Table 35 are derived from tests performed under the ambient
temperature conditions summarized in Table 24: General operating conditions.
Table 35. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions(1) Min Typ Max Unit
tRSTTEMPO(2)
VBOR0(2)
Reset temporization after BOR0 is detected VDD rising
Brown-out reset threshold 0
Rising edge
Falling edge
- 250 400 μs
1.62 1.66 1.70
1.60 1.64 1.69
VBOR1
Brown-out reset threshold 1
Rising edge
Falling edge
2.06 2.10 2.14
1.96 2.00 2.04
VBOR2
Brown-out reset threshold 2
Rising edge
Falling edge
2.26 2.31 2.35
2.16 2.20 2.24
VBOR3
VBOR4
Brown-out reset threshold 3
Brown-out reset threshold 4
Rising edge
Falling edge
Rising edge
Falling edge
2.56 2.61 2.66
2.47 2.52 2.57
V
2.85 2.90 2.95
2.76 2.81 2.86
VPVD0
Rising edge
Programmable voltage detector threshold 0
Falling edge
2.10 2.15 2.19
2.00 2.05 2.10
VPVD1
PVD threshold 1
Rising edge
Falling edge
2.26 2.31 2.36
2.15 2.20 2.25
VPVD2
PVD threshold 2
Rising edge
Falling edge
2.41 2.46 2.51
2.31 2.36 2.41
96/193
DS11929 Rev 10
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