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STM32WB55VCV7 View Datasheet(PDF) - STMicroelectronics

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STM32WB55VCV7 Datasheet PDF : 193 Pages
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Electrical characteristics
STM32WB55xx STM32WB35xx
Table 31. RF transmitter 802.15.4 characteristics (continued)
Symbol
Parameter
Conditions
Min Typ Max Unit
Maximum output power(1)
Prf
0 dBm output power
SMPS Bypass or ON
(VFBSMPS = 1.7 V and
VDD > 1.95 V)
SMPS Bypass
(VDD > 1.71 V) or ON
(VFBSMPS = 1.4 V and
VDD > 1.95 V)
-
Minimum output power
-
Pband Output power variation over the band Tx = 0 dBm - Typical
EVMrms EVM rms
Pmax
Txpd Transmit power density
|f - fc| > 3.5 MHz
- 5.7
- 3.7
-
0
- -20
-0.5 -
-
8
- -35
-
- dBm
-
-
0.4 dB
-%
- dB
1. Measured in conducted mode, based on reference design (see AN5165), using output power specific
external RF filter and impedance matching networks to interface with a 50 Ω antenna.
Symbol
Prx_max
Rsens
C/adj
C/alt
Table 32. RF receiver 802.15.4 characteristics
Parameter
Conditions
Maximum input signal
Min: -20 dBm and PER < 1%
Sensitivity (SMPS Bypass)
Sensitivity (SMPS ON)
Max: -85 dBm and PER < 1%
Adjacent channel rejection
-
Alternate channel rejection
-
Typ
-10
-100
-98
35
46
Unit
dBm
dB
Figure 19. Typical link quality indicator code vs. Rx level
240
TEST_NAME
220
TP/154/PHY24/RECEIVERͲ06/Ch11(2405MHz)
200
TP/154/PHY24/RECEIVERͲ06/Ch19(2445MHz)
180
160
TP/154/PHY24/RECEIVERͲ06/Ch26(2480MHz)
140
120
100
80
60
40
20
0
-120 -115-110 -105-100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20
PARAM2
Pin (dBm)
94/193
DS11929 Rev 10

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