ISPGDX160V-3Q208I View Datasheet(PDF) - Lattice Semiconductor
Part Name
Description
Manufacturer
ISPGDX160V-3Q208I Datasheet PDF : 36 Pages
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Specifications ispGDX160V
Absolute Maximum Ratings 1,2
Supply Voltage Vcc ................................. -0.5 to +5.4V
Input Voltage Applied ............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature ................................ -65 to 150°C
S Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (TJ) with Power Applied ... 150°C
E 1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
IC 2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
D DC Recommended Operating Conditions
V E SYMBOL
E VCC
Supply Voltage
U VIL1
Input Low Voltage
D VIH1
Input High Voltage
IN 1. Typical 100mV of input hysteresis.
PARAMETER
Commercial TA = 0°C to +70°C
Industrial
TA = -40°C to +85°C
MIN.
3.0
3.0
-0.3
2.0
MAX. UNITS
3.6
V
3.6
V
0.8
V
5.25
V
Table 2-0005/gdxv
T Capacitance (TA=25oC, f=1.0 MHz)
T SYMBOL
C C1
N C2
PARAMETER
I/O Capacitance
Dedicated Clock Capacitance
E O Erase/Reprogram Specifications
TYPICAL
8
10
UNITS
pf
pf
TEST CONDITIONS
VCC = 3.3V, VI/O = 2.0V
VCC = 3.3V, VY= 2.0V
Table 2 - 0006
LPARAMETER
SE DISC Erase/Reprogram Cycles
MINIMUM
10,000
MAXIMUM
—
UNITS
Cycles
16
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