ISPGDX160V-3Q208I View Datasheet(PDF) - Lattice Semiconductor

Part Name

Description

Manufacturer

ISPGDX160V-3Q208I

In-System Programmable 3.3V Generic Digital Crosspoint

Lattice Semiconductor 

Specifications ispGDX160V

Switching Test Conditions

Input Pulse Levels

GND to 3.0V

+ 3.3V

Input Rise and Fall Time

≤ 1.5ns 10% to 90%

Input Timing Reference Levels

1.5V

Output Timing Reference Levels

1.5V

Output Load

See figure at right

S 3-state levels are measured 0.5V from steady-state

active level.

Device

Output

R1

Test

Point

R2

CL*

E Output Load Conditions

TEST CONDITION

IC A

Active High

D B

Active Low

Active High to Z

V E C

at VOH -0.5V

Active Low to Z

at VOL+0.5V

E U D Slow Slew

R1

153Ω

∞

153Ω

∞

R2

134Ω

134Ω

∞

134Ω

CL

35pF

35pF

35pF

5pF

153Ω

∞

∞

5pF

∞ 35pF

Table 2-0004A

*CL includes Test Fixture and Probe Capacitance.

DC Electrical Characteristics

D IN Over Recommended Operating Conditions

SYMBOL

PARAMETER

T VOL Output Low Voltage

T VOH Output High Voltage

IIL

Input or I/O Low Leakage Current

C N IIH

Input or I/O High Leakage Current

IIL-PU

E IBHLS

O IBHHS

L IBHLO

E C IBHHO

IBHT

IOS1

S IS ICCQ4

I/O Active Pull-Up Current

Bus Hold Low Sustaining Current

Bus Hold High Sustaining Current

Bus Hold Low Overdrive Current

Bus Hold High Overdrive Current

Bus Hold Trip Points

Output Short Circuit Current

Quiescent Power Supply Current

ICC

Dynamic Power Supply Current

per Input Switching

D ICONT5 Maximum Continuous I/O Pin Sink

CONDITION

IOL =24 mA

IOH =-12 mA

0V ≤ VIN ≤ VIL (Max.)

VCC ≤ VIN ≤ 5.25V

0V ≤ VIN ≤ VIL

VIN = VIL (Max.)

VIN = VIH (Min.)

0V ≤ VIN ≤ VCC

0V ≤ VIN ≤ VCC

VCC = 3.3V, VOUT = 0.5V, TA = 25˚C

VIL = 0.5V, VIH = VCC

One input toggling @ 50% duty cycle,

outputs open.

MIN.

–

2.4

–

–

–

50

-50

–

–

VIL

–

–

–

TYP.2

–

–

–

–

–

–

–

–

–

–

–

70

See

Note 3

MAX.

0.55

–

-10

10

-150

–

–

550

-550

VIH

-250

–

–

UNITS

V

V

µA

µA

µA

µA

µA

µA

µA

V

mA

mA

mA/MHz

–

–

96

mA

Current Through Any GND Pin

1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test problems by tester ground

degradation. Characterized but not 100% tested.

2. Typical values are at VCC = 3.3V and TA = 25oC.

3. I / MHz = (0.01 x I/O cell fanout) + 0.04

CC

e.g. An input driving four I/O cells at 40 MHz results in a dynamic ICC of approximately ((0.01 x 4) + 0.04) x 40 = 3.2 mA.

4. For a typical application with 50% of I/O pins used as inputs, 50% used as outputs or bidirectionals.

5. This parameter limits the total current sinking of I/O pins surrounding the nearest GND pin.

17

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