DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ST72334J4B7(2003) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ST72334J4B7 Datasheet PDF : 153 Pages
First Prev 121 122 123 124 125 126 127 128 129 130 Next Last
ST72334J/N, ST72314J/N, ST72124J
16.6 MEMORY CHARACTERISTICS
16.6.1 RAM and Hardware Registers
Symbol
Parameter
VRM
Data retention mode 1)
Conditions
Min
Typ
Max
Unit
HALT mode (or RESET)
1.6
V
16.6.2 EEPROM Data Memory
Symbol
tprog
tret
NRW
Parameter
Conditions
Programming time for 1~16 bytes 3) -40°CTA+85°C
-40°CTA+125°C
Data retention 5)
TA=+55°C 4)
Write erase cycles 5)
TA=+25°C
Min
Typ
20
300 000
Max
Unit
20
ms
25
Years
Cycles
16.6.3 FLASH Program Memory
Symbol
TA(prog)
tprog
tret
NRW
Parameter
Conditions
Programming temperature range 2)
Programming time for 1~16 bytes 3) TA=+25°C
Programming time for 4 or 8kBytes
Data retention 5)
Write erase cycles 5)
TA=+25°C
TA=+55°C 4)
TA=+25°C
Min
Typ
Max
Unit
0
25
70
°C
8
25
ms
2.1
6.4
sec
20
years
100
cycles
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Data based on characterization results, tested in production at TA=25°C.
3. Up to 16 bytes can be programmed at a time for a 4kBytes FLASH block (then up to 32 bytes at a time for an 8k device)
4. The data retention time increases when the TA decreases.
5. Data based on reliability test results and monitored in production.
122/153

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]