PIC12F635/PIC16F636/639
15.2 DC Characteristics: PIC12F635/PIC16F636-I (Industrial) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020 IPD
Power-down Base
Current(4)
D021 ΔIWDT
— 0.99 TBD nA
— 1.2 TBD nA
— 2.9 TBD nA
— 0.3 TBD μA
2.0 WDT, BOD,
3.0 Comparators, VREF
5.0 and T1OSC disabled
2.0 WDT Current(3)
— 1.8 TBD μA 3.0
D022A ΔIBOD
— 8.4 TBD μA 5.0
—
58 TBD μA
3.0 BOD Current(3)
— 109 TBD μA 5.0
D022B ΔILVD
— TBD TBD μA 2.0 PLVD Current
— TBD TBD μA 3.0
D023 ΔICMP
— TBD TBD μA
— 3.3 TBD μA
5.0
2.0 Comparator Current(3)
— 6.1 TBD μA 3.0
D024 ΔIVREF
— 11.5 TBD μA
— 58 TBD μA
5.0
2.0 CVREF Current(3)
— 85 TBD μA 3.0
D025 ΔIT1OSC
— 138 TBD μA
— 4.0 TBD μA
5.0
2.0 T1OSC Current(3)
— 4.6 TBD μA 3.0
— 6.0 TBD μA 5.0
Legend:
†
Note 1:
2:
3:
4:
TBD = To Be Determined
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog
Front-End not included.
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have
an impact on the current consumption. MCU only, Analog Front-End not included.
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
© 2005 Microchip Technology Inc.
Preliminary
DS41232B-page 151