PIC16F636T-I/SL(2005) View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16F636T-I/SL
(Rev.:2005)

8/14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

Microchip Technology 

PIC12F635/PIC16F636/639

15.6 DC Characteristics: PIC16F639-I (Industrial)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C ≤ TA ≤ +85°C for industrial

Supply Voltage

2.0V ≤ VDD ≤ 3.6V

Param

No.

Sym

Device Characteristics

Min

Typ†

Max

Units

VDD

Conditions

Note

D010

IDD

Supply Current(1,2,3)

—

9

TBD

μA

2.0 FOSC = 32.768 kHz

—

18

TBD

μA

3.0

LP Oscillator mode

D011

—

110

TBD

μA

—

190

TBD

μA

2.0 FOSC = 1 MHz

3.0

XT Oscillator mode

D012

—

220

TBD

μA

—

370

TBD

μA

2.0 FOSC = 4 MHz

3.0

XT Oscillator mode

D013

—

70

TBD

μA

—

140

TBD

μA

2.0 FOSC = 1 MHz

3.0 EC Oscillator mode

D014

—

180

TBD

μA

—

320

TBD

μA

2.0 FOSC = 4 MHz

3.0 EC Oscillator mode

D015

—

TBD

TBD

μA

—

TBD

TBD

μA

2.0 FOSC = 31 kHz

3.0 LFINTOSC mode

D016

—

340

TBD

μA

—

500

TBD

μA

2.0 FOSC = 4 MHz

3.0 HFINTOSC mode

D017

D020

IPD

Power-down Base Current(4)

D021

ΔIWDT

—

180

TBD

μA

—

320

TBD

μA

—

0.99

TBD

nA

—

1.2

TBD

nA

—

0.3

TBD

μA

2.0 FOSC = 4 MHz

3.0 EXTRC mode

2.0 WDT, BOD, Comparators,

3.0

VREF and T1OSC disabled

(excludes AFE)

2.0 WDT Current(3)

D022A ΔIBOD

—

1.8

TBD

μA

3.0

—

58

TBD

μA

3.0 BOD Current(3)

D022B ΔILVD

—

TBD

TBD

μA

2.0 PLVD Current

D023

ΔICMP

—

TBD

TBD

μA

—

3.3

TBD

μA

3.0

2.0 Comparator Current(3)

D024

ΔIVREF

—

6.1

TBD

μA

3.0

—

58

TBD

μA

2.0

CVREF Current(3)

D025

ΔIT1OSC

—

85

TBD

μA

3.0

—

4.0

TBD

μA

2.0 T1OSC Current(3)

—

4.6

TBD

μA

3.0

D026

IACT

Active Current of AFE only

CS = VDD; Input = Continuous

(receiving signal)

Wave (CW);

1 LC Input Channel Signal —

10

—

μA

3.6 Amplitude = 300 mVPP.

3 LC Input Channel Signals —

—

16

μA

3.6 All channels enabled.

D027

ISTDBY Standby Current of AFE only

(not receiving signal)

1 LC Input Channel Enabled —

3

2 LC Input Channels Enabled —

4

3 LC Input Channels Enabled —

5

CS = VDD; ALERT = VDD

5

μΑ

3.6

6

μA

3.6

7

μA

3.6

D028

ISLEEP Sleep Current of AFE only

—

0.2

1

μA

3.6 CS = VDD; ALERT = VDD

Legend:

†

Note 1:

2:

3:

4:

TBD = To Be Determined

Data in ‘Typ’ column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri-

stated, pulled to VDD; MCLR = VDD; WDT disabled. MCU only, Analog Front-End not included.

The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate,

oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. MCU only, Analog

Front-End not included.

The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The

peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when

calculating total current consumption.

The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep

mode, with all I/O pins in high-impedance state and tied to VDD.

© 2005 Microchip Technology Inc.

Preliminary

DS41232B-page 157

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