PIC16F636T-I/SL(2005) View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16F636T-I/SL
(Rev.:2005)

8/14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

Microchip Technology 

PIC12F635/PIC16F636/639

15.7 DC Characteristics: PIC16F639-E (Extended)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C ≤ TA ≤ +125°C for extended

Supply Voltage

2.0V ≤ VDD ≤ 3.6V

Param

No.

Sym

Device Characteristics

Min Typ† Max Units

VDD

Conditions

Note

D010E IDD

Supply Current(1,2)

—

9

TBD

μA

2.0

—

18

TBD

μA

3.0

D011E

—

110 TBD

μA

2.0

—

190 TBD

μA

3.0

D012E

—

220 TBD

μA

2.0

—

370 TBD

μA

3.0

D013E

—

70

TBD

μA

2.0

—

140 TBD

μA

3.0

D014E

—

180 TBD

μA

2.0

—

320 TBD

μA

3.0

D015E

—

TBD TBD

μA

2.0

—

TBD TBD

μA

3.0

D016E

—

340 TBD

μA

2.0

—

500 TBD

μA

3.0

D017E

—

180 TBD

μA

2.0

D020

IPD

Power-down Base Current(4)

D021 ΔIWDT

—

320 TBD

μA

3.0

—

0.99 TBD

nA

2.0 WDT, BOD, Comparators, VREF and

—

1.2

TBD

nA

3.0 T1OSC disabled (excludes AFE)

—

0.3

TBD

μA

2.0 WDT Current(3)

D022A ΔIBOD

—

1.8

TBD

μA

3.0

—

58

TBD

μA

3.0 BOD Current(3)

D022B ΔILVD

—

TBD TBD

μA

2.0 PLVD Current

D023 ΔICMP

—

TBD TBD

μA

—

3.3

TBD

μA

3.0

2.0 Comparator Current(3)

D024

ΔIVREF

—

6.1

TBD

μA

3.0

—

58

TBD

μA

2.0 CVREF Current(3)

D025 ΔIT1OSC

—

85

TBD

μA

3.0

—

4.0

TBD

μA

2.0 T1OSC Current(3)

—

4.6

TBD

μA

3.0

D026

IACT

Active Current of AFE only

CS = VDD; Input = Continuous Wave

(receiving signal)

(CW); Amplitude = 300 mVPP. All

1 LC Input Channel Signal —

10

—

μA

3.6 channels enabled.

3 LC Input Channel Signals —

—

16

μA

3.6

D027 ISTDBY Standby Current of AFE only

(not receiving signal)

1 LC Input Channel Enabled —

3

2 LC Input Channels Enabled —

4

3 LC Input Channels Enabled —

5

CS = VDD; ALERT = VDD

5

μΑ

3.6

6

μA

3.6

7

μA

3.6

D028 ISLEEP Sleep Current of AFE only

—

0.2

1

μA

3.6 CS = VDD; ALERT = VDD

Legend:

†

Note 1:

2:

3:

4:

TBD = To Be Determined

Data in ‘Typ’ column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri-

stated, pulled to VDD; MCLR = VDD; WDT disabled.

The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate,

oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption.

The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The

peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when

calculating total current consumption.

The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep

mode, with all I/O pins in high-impedance state and tied to VDD.

DS41232B-page 158

Preliminary

© 2005 Microchip Technology Inc.

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