PIC16F636T-I/SL(2005) View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16F636T-I/SL
(Rev.:2005)

8/14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

Microchip Technology 

PIC12F635/PIC16F636/639

15.5 DC Characteristics: PIC16F639-I (Industrial), PIC16F639-E (Extended)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C ≤ TA ≤ +85°C for industrial

-40°C ≤ TA ≤ +125°C for extended

Param

No.

Sym

Characteristic

Min Typ† Max Units

Conditions

D001 VDD Supply Voltage

2.0 — 3.6 V FOSC ≤ 10 MHz

D001A VDDT Supply Voltage (AFE)

2.0 — 3.6

V Analog Front-End VDD voltage. Treated as

VDD in this document.

D002 VDR

RAM Data Retention

Voltage(1)

1.5* — — V Device in Sleep mode

D003

VPOR

VDD Start Voltage to

—

ensure internal Power-on

Reset signal

VSS —

V See Section 12.3 “Power-on Reset” for

details.

D003A VPORT VDD Start Voltage (AFE) —

to ensure internal Power-

on Reset signal

— 1.8

V Analog Front-End POR voltage.

D004

SVDD

VDD Rise Rate to ensure 0.05* —

internal Power-on Reset

signal

— V/ms See Section 12.3 “Power-on Reset” for

details.

D005 VBOD Brown-out Detect

— 2.1 — V

D006 RM

Turn-on Resistance or

Modulation Transistor

— — 100 Ohm VDD = 3.0V

D007 RPU

Digital Input Pull-Up

Resistor

CS, SCLK

50 200 300 kOhm VDD = 3.6V

D008 IAIL

Analog Input Leakage

Current

LCX, LCY, LCZ — — ±1 μA VDD = 3.6V, VSS ≤ VIN ≤ VDD, tested at

LCCOM — — ±1 μA Sleep mode

*

†

Note 1:

These parameters are characterized but not tested.

Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.

DS41232B-page 156

Preliminary

© 2005 Microchip Technology Inc.

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