PIC16F636T-I/SL(2005) View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16F636T-I/SL
(Rev.:2005)

8/14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

Microchip Technology 

PIC12F635/PIC16F636/639

15.8 DC Characteristics: PIC16F639-I (Industrial), PIC16F639-E (Extended) (Continued)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C ≤ TA ≤ +85°C for industrial

-40°C ≤ TA ≤ +125°C for extended

Supply Voltage

2.0V ≤ VDD ≤ 3.6V

Param

No.

Sym

Characteristic

Min

Typ†

Max

Units

Conditions

VOH

Output High Voltage

D090

I/O ports

VDD – 0.7

—

—

V IOH = -3.0 mA, VDD = 3.6V (Ind.)

D092

OSC2/CLKOUT (RC mode)

VDD – 0.7

—

—

V IOH = -1.3 mA, VDD = 3.6V (Ind.)

IOH = -1.0 mA, VDD = 3.6V (Ext.)

Digital Output High Voltage

Analog Front-End (AFE) section

D093

LFDATA/SDIO for Analog Front-End

VDD – 0.5

—

—

V IOH = -400 μA, VDD = 2.0V

(AFE)

Capacitive Loading Specs on

Output Pins

D100 COSC2 OSC2 pin

—

—

15*

pF In XT, HS and LP modes when

external clock is used to drive OSC1

D101 CIO

All I/O pins

—

—

50*

pF

D102 IULP

Ultra Low-power Wake-up Current

—

200

—

nA

Data EEPROM Memory

D120 ED

Byte Endurance

100K

1M

—

E/W -40°C ≤ TA ≤ +85°C

D120A ED

Byte Endurance

10K

100K

—

E/W +85°C ≤ TA ≤ +125°C

D121 VDRW VDD for Read/Write

VMIN

—

5.5

V Using EECON1 to read/write

VMIN = Minimum operating voltage

D122 TDEW Erase/Write cycle time

—

5

6

ms

D123 TRETD Characteristic Retention

40

—

—

Year Provided no other specifications are

violated

D124 TREF Number of Total Erase/Write Cycles

1M

10M

—

E/W -40°C ≤ TA ≤ +85°C

before Refresh(1)

Program Flash Memory

D130 EP

Cell Endurance

10K

100K

—

E/W -40°C ≤ TA ≤ +85°C

D130A ED

Cell Endurance

1K

10K

—

E/W +85°C ≤ TA ≤ +125°C

D131 VPR

VDD for Read

VMIN

—

5.5

V VMIN = Minimum operating voltage

D132 VPEW VDD for Erase/Write

4.5

—

5.5

V

D133 TPEW Erase/Write cycle time

—

2

2.5

ms

D134 TRETD Characteristic Retention

40

—

—

Year Provided no other specifications are

violated

* These parameters are characterized but not tested.

† Data in ‘Typ’ column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC

mode.

2: Negative current is defined as current sourced by the pin.

3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating

conditions. Higher leakage current may be measured at different input voltages.

4: See Section 9.4.1 “Using the Data EEPROM” for additional information

DS41232B-page 160

Preliminary

© 2005 Microchip Technology Inc.

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