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OR2T15B7BA352-DB View Datasheet(PDF) - Lattice Semiconductor

Part Name
Description
Manufacturer
OR2T15B7BA352-DB
Lattice
Lattice Semiconductor 
OR2T15B7BA352-DB Datasheet PDF : 200 Pages
First Prev 131 132 133 134 135 136 137 138 139 140 Next Last
Data Sheet
November 2006
ORCA Series 2 FPGAs
Electrical Characteristics (continued)
Table 31B. OR2TxxB Electrical Characteristics
OR2TxxB Commercial: VDD = 3.0 V to 3.6 V, 0 °C TA 70 °C; OR2TxxB Industrial: VDD = 3.0 V to 3.6 V, –40 °C TA +85 °C.
Parameter
Input Voltage:
High
S Low
Output Voltage:
High
E Low
Input Leakage Current
Standby Current:
IC OR2T15B
D OR2T40B
Symbol
VIH
VIL
VOH
VOL
IL
IDDSB
Test Conditions
Input configured as CMOS
VDD = min, IOH = 6 mA or 3 mA
VDD = min, IOL = 12 mA or 6 mA
VDD = max, VIN = VSS or VDD
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
internal oscillator running,
no output loads,
inputs at VDD or GND
(after configuration)
V E Standby Current:
OR2T15B
E U OR2T40B
IDDSB
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
internal oscillator stopped,
no output loads,
inputs at VDD or GND
(after configuration)
D IN Data Retention Voltage
Input Capacitance
T Output Capacitance
T DONE Pull-up Resistor*
C M3, M2, M1, and M0
N Pull-up Resistors*
I/O Pad Static Pull-up
E Current*
O I/O Pad Static Pull-down Cur-
rent
L I/O Pad Pull-up Resistor*
E C I/O Pad Pull-down
Resistor
VDR
CIN
COUT
RDONE
RM
IPU
IPD
RPU
RPD
TA = 25 °C
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
Test frequency = 1 MHz
OR2TxxB (TA = 25 °C, VDD = 3.3 V)
Test frequency = 1 MHz
VDD = 3.6 V, VIN = VSS, TA = 0 °C
VDD = 3.6 V, VIN = VDD, TA = 0 °C
VDD = all, VIN = VSS, TA = 0 °C
VDD = all, VIN = VDD, TA = 0 °C
S DIS * On the OR2TxxB devices, the pull-up resistor will externally pull the pin to a level 1.0 V below VDD.
OR2TxxB
Min
Max
80% VDD
GND – 0.5
VDD + 0.3
15% VDD
Unit
V
V
2.4
V
0.4
V
–10
10
µA
5.5
mA
8.0
mA
2.0
mA
4.5
mA
2.3
100k
100k
14.4
26
100k
50k
V
8
pF
8
pF
Ω
Ω
50.9
µA
103
µA
Ω
Ω
Lattice Semiconductor
133

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