ADSP-BF512/BF514/BF514F16/BF516/BF518/BF518F16
ELECTRICAL CHARACTERISTICS
Parameter
VOH
VOL
IIH1
IIL1
IIHP2
IOZH3
IOZHTWI4
IOZL3
CIN5, 6
CINTWI4, 6
IDDDEEPSLEEP7
IDDSLEEP
IDD-IDLE
IDD-TYP
IDD-TYP
IDDHIBERNATE8
IDDRTC
IDDSLEEP8, 9
Test Conditions
Min
High Level Output Voltage
VDDEXT /VDDMEM = 1.7 V,
1.35
IOH = –0.5 mA
High Level Output Voltage
VDDEXT /VDDMEM = 2.25 V,
2
IOH = –0.5 mA
High Level Output Voltage
VDDEXT /VDDMEM = 3.0 V,
2.4
IOH = –0.5 mA
Low Level Output Voltage
VDDEXT /VDDMEM = 1.7/2.25/3.0 V,
IOL = 2.0 mA
High Level Input Current
VDDEXT /VDDMEM = 3.6 V, VIN = 3.6 V
Low Level Input Current
VDDEXT /VDDMEM = 3.6 V, VIN = 0 V
High Level Input Current JTAG VDDEXT = 3.6 V, VIN = 3.6 V
Three-State Leakage Current VDDEXT/VDDMEM= 3.6 V, VIN = 3.6 V
Three-State Leakage Current VDDEXT = 3.0 V, VIN = 5.5 V
Three-State Leakage Current VDDEXT/VDDMEM= 3.6 V, VIN = 0 V
Input Capacitance
fIN = 1 MHz, TAMBIENT = 25°C,
VIN = 2.5 V
Input Capacitance
fIN = 1 MHz, TAMBIENT = 25°C,
VIN = 2.5 V
VDDINT Current in Deep Sleep
Mode
VDDINT = 1.3 V, fCCLK = 0 MHz,
fSCLK = 0 MHz, TJ = 25°C,
ASF = 0.00
VDDINT Current in Sleep Mode
VDDINT Current in Idle
VDDINT = 1.3 V, fSCLK = 25 MHz,
TJ = 25°C
VDDINT = 1.3 V, fCCLK = 50 MHz,
fSCLK = 25 MHz, TJ = 25°C,
ASF = 0.41
VDDINT Current
VDDINT = 1.3 V, fCCLK = 300 MHz,
fSCLK = 25 MHz, TJ = 25°C,
ASF = 1.00
VDDINT Current
VDDINT = 1.4 V, fCCLK = 400 MHz,
fSCLK = 25 MHz, TJ = 25°C,
ASF = 1.00
Hibernate State Current
VDDEXT = VDDMEM =VDDRTC = 3.3 V
VDDOTP = VPPOTP = 2.5 V, TJ = 25°C,
CLKIN = 0 MHz
VDDRTC Current
VDDINT Current in Sleep Mode
VDDRTC = 3.3 V, TJ = 25°C
fCCLK = 0 MHz, fSCLK > 0 MHz
IDDDEEPSLEEP8, 10 VDDINT Current in Deep Sleep
Mode
IDDINT10, 11
VDDINT Current
fCCLK = 0 MHz, fSCLK = 0 MHz
fCCLK > 0 MHz, fSCLK 0 MHz
Typical Max
Unit
V
V
V
0.4
V
10
μA
10
μA
75
μA
10
μA
10
μA
10
μA
5
8
pF
15
pF
2.1
mA
5.5
mA
12
mA
77
mA
108
mA
40
μA
20
μA
Table 14 +
mA10
(0.20 × VDDINT × fSCLK)
Table 14
mA
Table 14 +
mA
(Table 15 × ASF) +
(0.20 × VDDINT × fSCLK)
Rev. D | Page 24 of 68 | April 2014