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DSPIC33EV64GM102-I/SO View Datasheet(PDF) - Microchip Technology

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DSPIC33EV64GM102-I/SO Datasheet PDF : 500 Pages
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dsPIC33EVXXXGM00X/10X FAMILY
5.0 FLASH PROGRAM MEMORY
Note 1: This data sheet summarizes the
features of the dsPIC33EVXXXGM00X/
10X family of devices. It is not intended
to be a comprehensive reference
source. To complement the information
in this data sheet, refer to “Flash Pro-
gramming” (DS70609) in the “dsPIC33/
PIC24 Family Reference Manual”, which
is available from the Microchip web site
(www.microchip.com).
2: Some registers and associated bits
described in this section may not be
available on all devices. Refer to
Section 4.0 “Memory Organization” in
this data sheet for device-specific register
and bit information.
The dsPIC33EVXXXGM00X/10X family devices
contain internal Flash program memory for storing and
executing application code. The memory is readable,
writable and erasable during normal operation over the
entire VDD range.
The Flash memory can be programmed in the following
three ways:
• In-Circuit Serial Programming™ (ICSP™)
• Run-Time Self-Programming (RTSP)
• Enhanced In-Circuit Serial Programming
(Enhanced ICSP)
ICSP allows for a dsPIC33EVXXXGM00X/10X family
device to be serially programmed while in the end
application circuit. This is done with two lines for
programming clock and programming data (PGECx/
PGEDx) lines, and three other lines for power (VDD),
ground (VSS) and Master Clear (MCLR). This allows
customers to manufacture boards with unprogrammed
devices and then program the device just before
shipping the product. This also allows the most recent
firmware or a custom firmware to be programmed.
Enhanced ICSP uses an on-board bootloader, known as
the Program Executive (PE), to manage the programming
process. Using an SPI data frame format, the Program
Executive can erase, program and verify program
memory. For more information on Enhanced ICSP, refer
to the specific device programming specification.
RTSP is accomplished using the TBLRD (Table Read)
and TBLWT (Table Write) instructions. With RTSP, the
user application can write program memory data as a
double program memory word, a row of 64 instructions
(192 bytes) and erase program memory in blocks of
512 instruction words (1536 bytes) at a time.
5.1 Table Instructions and Flash
Programming
The Flash memory read and the double-word
programming operations make use of the TBLRD and
TBLWT instructions, respectively. These allow direct read
and write access to the program memory space from the
data memory while the device is in normal operating
mode. The 24-bit target address in the program memory
is formed using bits<7:0> of the TBLPAG register and
the Effective Address (EA) from a W register, specified
in the table instruction, as shown in Figure 5-1.
The TBLRDL and the TBLWTL instructions are used to
read or write to bits<15:0> of the program memory.
TBLRDL and TBLWTL can access program memory in
both Word and Byte modes.
The TBLRDH and TBLWTH instructions are used to read
or write to bits<23:16> of the program memory.
TBLRDH and TBLWTH can also access program
memory in Word or Byte mode.
FIGURE 5-1:
ADDRESSING FOR TABLE REGISTERS
24 Bits
Using
Program Counter
0
Program Counter
0
Using
Table Instruction
1/0 TBLPAG Reg
8 Bits
Working Reg EA
16 Bits
User/Configuration
Space Select
24-Bit EA
2013-2016 Microchip Technology Inc.
Byte
Select
DS70005144E-page 83

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