T2080NXE8MQLB View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
T2080NXE8MQLB Datasheet PDF : 186 Pages
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Electrical characteristics
Table 7. T2080 power dissipation with Altivec power-gated on1
Power
mode
Core freq
(MHz)
Plat
freq
(MHz)
DDR
data
rate
(MT/s
)
FMan
freq
(MHz)
VDD8
(V)
SnVD
D
8. Voltage ID (VID) operating range is between 0.975 V to 1.025 V.
Junction
temperature
(ºC)
Core and
platform
power1
(W)
VDD
power
(W)
SnVDD
Notes
9. The difference between low-power and standard is shown in the product part number. The low-power version part numbers
end in "T1B", "P1B", and "QLB".
This table provides all the estimated I/O power supply values based on preliminary
measurements.
Table 8. T2080 I/O power dissipation
I/O Power supply
LVCMOS
LVCMOS
LVCMOS
LVCMOS
LVCMOS
LVCMOS
LVCMOS
DDR I/O
DDR I/O
DDR I/O
DDR I/O
DDR I/O
USB_PHY
USB_PHY
USB_SVDD
PLL core and
system
OVDD 1.8 V
CVDD 1.8 V
CVDD 2.5 V
LVDD 1.8 V
LVDD 2.5 V
DVDD 1.8 V
DVDD 2.5 V
GVDD 1.5 V
GVDD 1.35 V
GVDD 1.5 V
GVDD 1.35 V
GVDD 1.5 V
USB_OVDD 1.8 V
USB_HVDD 3.3 V
USB_SVDD
AVDD_CGA*,
AVDD_PLAT
PLL DDR
AVDD_D1
PLL LYNX
AVDD_SRDS*
SerDes, 1.35 V
SerDes, 1.35 V
SerDes, 1.35 V
SerDes, 1.35 V
SerDes, 1.35 V
SerDes, 1.35 V
SerDes, 1.35 V
SerDes, 1.35 V
XVDD SGMII
XVDD
XVDD
XVDD
XVDD
XVDD
XVDD
XVDD SATA
Parameter
—
—
—
—
—
—
—
2133 MT/s
1867 MT/s
1867 MT/s
1600 MT/s
1600 MT/s
—
—
—
—
Typical (mW)
50
40
50
230
310
50
70
1144
840
1030
720
890
40
100
7
20
—
30
—
50
1x 1.25 G-baud 50
2x 1.25 G-baud 70
4x 1.25 G-baud 130
8x 1.25 G-baud 230
1x 3.125 G-baud 50
2x 3.125 G-baud 80
4x 3.125 G-baud 140
1x 3 G-baud
50
Table continues on the next page...
Maximum (mW)
60
70
80
360
440
90
130
2200
1610
1990
1380
1700
60
110
7
20
40
50
60
90
140
240
60
90
150
60
Notes
1, 3, 4, 6
1, 2, 5, 6
1, 6
1, 6
1, 6, 7
QorIQ T2080 Data Sheet, Rev. 3, 03/2018
54
NXP Semiconductors
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